irg4psh71u ultrafast speed igbt insulated gate bipolar transistor pd - 91685 e c g n-channel features ultrafast switching speed optimized for operating frequencies 8 to 40khz in hard switching, 200khz in resonant mode soft switching generation 4 igbt design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations industry-benchmark super-247 package with higher power handling capability compared to same footprint to-247 creepage distance increased to 5.35mm generation 4 igbt's offer highest efficiencies available maximum power density, twice the power handling of the to-247, less space than to-264 igbts optimized for specific application conditions cost and space saving in designs that require multiple, paralleled igbts benefits v ces = 1200v v ce(on) typ. = 2.50v @v ge = 15v, i c = 50a www.irf.com 1 super - 247 ab so l ute m ax i mum r at i ngs parameter max. units v ces collector-to-emitter voltage 1200 v i c @ t c = 25c continuous collector current 99 a i c @ t c = 100c continuous collector current 50 i cm p u l se c o ll ector c urrent 200 i lm cl ampe d i n d uct i ve l oa d current 200 v ge gate-to-emitter voltage 20 v e arv r everse v o l tage a va l anc h e e nergy 150 mj p d @ t c = 25c maximum power dissipation 350 w p d @ t c = 100c maximum power dissipation 140 t j operating junction and -55 to +150 t stg storage temperature range c storage temperature range, for 10 sec. 300 (0.063 in. (1.6mm) from case) th erma l / m ec h an i ca l ch aracter i st i cs parameter min. typ. max. units r jc junction-to-case- igbt CC C CC C 0.36 c/w r cs case-to-sink, flat, greased surface CC C 0.24 CC C r ja junction-to-ambient, typical socket mount CC C CC C 38 recommended clip force 20 (2.0) n (kgf) wt weight CCC 6 (0.21) CCC g (oz.) downloaded from: http:///
irg4psh71u 2 www.irf.com notes: repetitive rating: v ge =20v; pulse width limited by maximum junction temperature (figure 20) v cc =80%(v ces ), v ge =20v, l=10h, r g = 5.0 ? (figure 13a) pulse width 80s; duty factor 0.1%. pulse width 5.0s, single shot. repetitive rating; pulse width limited by maximumjunction temperature. electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 1200 v v ge = 0v, i c = 250a v (br)ecs emitter-to-collector breakdown voltage 19 v v ge = 0v, i c = 1.0a ? v (br)ces / ? t j temperature coeff. of breakdown voltage 0.78v/c v ge = 0v, i c = 1ma 2.52 2.70 v i c = 70a v ge = 15v v ce(on) collector-to-emitter saturation voltage 3.17 i c = 140a see fig.2, 5 2.68 i c = 70a, t j = 150c v ge(th) gate threshold voltage 3.0 6.0 v ce = v ge , i c = 250a ? v ge(th) / ? t j threshold voltage temp. coefficient -9.2 mv/ c v ce = v ge , i c = 1.0ma gfe forward transconductance 48 72 s v ce = 100v, i c = 70a i ces zero gate voltage collector current 500 a v ge = 0v, v ce = 1200v 2.0 v ge = 0v, v ce = 10v 5000 v ge = 0v, v ce = 1200v, t j = 150c i ges gate-to-emitter leakage current 100 na v ge = 20v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions q g total gate charge (turn-on) 370 560 i c = 70a q ge gate-to-emitter charge (turn-on) 61 24 nc v cc = 400v see fig.8 q gc gate-to-collector charge (turn-on) 120 50 v ge = 15v t d(on) turn-on delay time 51 i c = 70a, v cc = 960v t r rise time 70 ns v ge = 15v, r g = 5.0 ? t d(off) turn-off delay time 280 390 energy losses include "tail" t f fall time 170 260 see fig. 9, 10, 11, 14 e on turn-on switching loss 4.77 e off turn-off switching loss 9.54 mj e tot total switching loss 14.3 15.8 t d(on) turn-on delay time 49 t j = 150c, see fig. 9, 10, 11, 14 t r rise time 70 ns i c = 70a, v cc = 960v t d(off) turn-off delay time 390 v ge = 15v, r g = 5.0 ? t f fall time 360 energy losses include "tail" e ts total switching loss 25 mj l e internal emitter inductance 13 nh measured 5mm from package c ies input capacitance 7280 v ge = 0v c oes output capacitance 290 pf v cc = 30v, see fig.7 c res reverse transfer capacitance 50 f = 1.0mhz downloaded from: http:///
irg4psh71u www.irf.com 3 0.1 1 10 100 f , frequency ( khz ) 0 10 20 30 40 50 60 l o a d c u r r e n t ( a ) for both: duty cycle : 50% tj = 125c tsink = 90c gate drive as specified power dissipation = 58w fig. 1 - typical load current vs. frequency (for square wave, i=i rms of fundamental; for triangular wave, i=i pk ) fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics triangular wave: clamp voltage: 80% of rated 60% of rated voltage ideal diodes square wave: 012345 v ce , collector-to-emitter voltage (v) 0.1 1 10 100 1000 i c , c o l l e c t o r - t o e m i t t e r c u r r e n t ( a ) v ge = 15v < 60s pulse width t j = 25c t j = 150c 4 6 8 10 v ge, gate-to-emitter voltage (v) 0.1 1.0 10.0 100.0 1000.0 i c , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) t j = 25c t j = 150c v cc = 50v < 60s pulse width downloaded from: http:///
irg4psh71u 4 www.irf.com 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 1e-005 0.0001 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc fig. 6 - maximum effective transient thermal impedance, junction-to-case fig. 5 - collector-to-emitter voltage vs. junction temperature fig. 4 - maximum collector current vs. case temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 2.0 2.5 3.0 3.5 4.0 v c e , c o l l e c t o r - t o e m i t t e r v o l t a g e ( v ) i c = 140a v ge = 15v 380s pulse width i c = 70a i c = 35a ri (c/w) i (sec) 0.253 0.0091590.1057 0.038041 j j 1 1 2 2 r 1 r 1 r 2 r 2 c ci i / ri ci= i / ri 25 50 75 100 125 150 t j , junction temperature (c) 0 20 40 60 80 100 m a x i m u m d c c o l l e c t o r c u r r e n t ( a ) v ge = 15v downloaded from: http:///
irg4psh71u www.irf.com 5 fig. 10 - typical switching losses vs. junction temperature fig. 9 - typical switching losses vs. gate resistance fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 7 - typical capacitance vs. collector-to-emitter voltage 1 10 100 1000 v ce , collector-to-emitter voltage (v) 0 2000 4000 6000 8000 10000 12000 14000 c , c a p a c i t a n c e ( p f ) coes cres cies v ge = 0v, f = 1 mhz c ies = c ge + c gc , c ce shorted c res = c gc c oes = c ce + c gc 0 100 200 300 400 q g, total gate charge (nc) 0 4 8 12 16 20 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v cc = 400v i c = 70a -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 1 10 100 1000 t o t a l s w i t c h i n g l o s s e s ( m j ) r g = 5.0 ? v ge = 15v v cc = 960v i c = 140a i c = 70a i c = 35a 0 10 20 30 40 r g , gate resistance ( ? ) 10 15 20 25 s w i t c h i n g l o s s e s ( m j ) v cc = 960v v ge = 15v t j = 25c i c = 70a downloaded from: http:///
irg4psh71u 6 www.irf.com fig. 12 - turn-off soa fig. 11 - typical switching losses vs. collector-to-emitter current 20 40 60 80 100 120 140 i c , collector current (a) 0 10 20 30 40 50 60 70 t o t a l s w i t c h i n g l o s s e s ( m j ) r g = 5.0 ? tj = 150c v ge = 15v v cc = 960v 1 10 100 1000 10000 v ce , collector-to-emitter voltage (v) 1 10 100 1000 i c , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) v ge = 20v t j = 125 safe operating area downloaded from: http:///
irg4psh71u www.irf.com 7
d.u.t. 50v l v * c * driver same type as d.u.t.; vc = 80% of vce(max) * note: due to the 50v power supply, pulse width and inductor will increase to obtain rated id. 1000v fig. 13a - clamped inductive load test circuit fig. 13b - pulsed collector current test circuit 480f 960v
t=5s d(on) t t f t r 90% t d(off) 10% 90% 10% 5% v c i c e on e off ts on off e = (e +e ) fig. 14b - switching loss waveforms 50v driver* 1000v d.u.t. i c c v l fig. 14a - switching loss test circuit downloaded from: http:///
irg4psh71u 8 www.irf.com super to-247 ? package is not recommended for surface mount application. super-247? (to-274aa) package outline b ? 1.60 [.063] 12 0.25 [.010] ba 3 0.13 [.005] 2.35 [.092] 1.65 [.065] 2.15 [.084] 1.45 [.058] 5.50 [.216] 4.50 [.178] e e 3x 1.60 [.062] 1.45 [.058] 16.10 [.632] 15.10 [.595] 20.80 [.818] 19.80 [.780] 14.80 [.582] 13.80 [.544] 4.25 [.167] 3.85 [.152] 5.45 [.215] 1.30 [.051] 0.70 [.028] 13.90 [.547] 13.30 [.524] 16.10 [.633] 15.50 [.611] 4 0.25 [.010] b a 4 3.00 [.118] 2.00 [.079] a 2x r max. section e-e 2x 1.30 [.051] 1.10 [.044] 3x 1. dime ns ioning and t ole rancing pe r as me y14.5m-1994. 2. dime ns ions are s hown in mil l ime t e rs [inche s ] 3. controlling dimension: millimeter not e s : 4. ou t l i ne conf or ms t o j e de c ou t l i ne t o- 27 4aa 3 - s ource 2 - drain 1 - gat e 4 - drain 3 - emit t er 4 - col l e ct or 1 - gat e 2 - col l e ct or l e ad as s i gnme nt s mos f e t igbt c logo assembly lot code example: this is an irfps37n50a with international rectifier irfps37n50a a8b9 0020 date code part number top (yyww) yy = year ww = week assembly lot code a8b9 super-247? (to-274aa)part marking information data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on irs web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 5/04 downloaded from: http:///
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